July 1999
FDG6302P
Dual P-Channel, Digital FET
General Description
Features
-25 V, -0.14 A continuous, -0.4 A peak.
RDS(ON) = 10 Ω @ VGS= -4.5 V,
RDS(ON) = 13 Ω @ VGS= -2.7 V.
These dual P-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. This device has been
designed especially for low voltage applications as a
replacement for bipolar digital transistors and small
signal MOSFETs.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (VGS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
Compact industry standard SC70-6 surface
mount package.
SC70-6
SuperSOTTM-6
SOT-23
D1
G2
SO-8
SuperSOTTM-8
SOT-223
S2
1 or 4 *
.
S1
SC70-6
G1
D2
6 or 3
2 or 5
5 or 2
3 or 6
.02
4 or 1
*
*The pinouts are symmetrical; pin 1 and 4 are interchangeable.
Units inside the carrier can be of either orientation and will not affect the functionality of the device.
Absolute Maximum Ratings
Symbol
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain/Output Current
PD
TA = 25°C unless otherwise noted
Parameter
FDG6302P
-25
Maximum Power Dissipation
-8
- Pulsed
V
V
-0.14
- Continuous
Units
A
-0.4
(Note 1)
TJ,TSTG
Operating and Storage Temperature Range
ESD
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100 pF / 1500 Ω)
0.3
W
-55 to 150
°C
6.0
kV
415
°C/W
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
FDG6302P Rev.F1
Typical Electrical Characteristics
2.5
VGS = -4.5V
-3.5V
R DS(ON), NORMALIZED
-3.0V
0.15
-2.7V
-2.5V
0.1
-2.0V
0.05
0
0
1
2
3
DRAIN-SOURCE ON-RESISTANCE
-I D , DRAIN-SOURCE CURRENT (A)
0.2
VGS = -2.0V
2
-2.7V
-3.5V
0.1
0.15
0.2
25
R DS(ON) , ON-RESISTANCE (OHM)
I D = -0.14A
V GS = -4.5V
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
TJ , JUNCTION TEMPERATURE (°C)
I D = -0.07A
20
15
TA = 125°C
10
TA = 25°C
5
0
1.5
2
Figure 3. On-Resistance Variation
with Temperature.
0.3
T = -55°C
A
0.12
25°C
125°C
0.1
0.08
0.06
0.04
0.02
0
1
2
3
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
3.5
4
4.5
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0.14
VDS = -5.0V
2.5
-VGS , GATE TO SOURCE VOLTAGE (V)
-I S , REVERSE DRAIN CURRENT (A)
R DS(ON) , NORMALIZED
0.05
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
DRAIN-SOURCE ON-RESISTANCE
0
-I D , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
-ID , DRAIN CURRENT (A)
-4.0V
-4.5V
1
-V DS , DRAIN-SOURCE VOLTAGE (V)
0
-3.0V
1.5
0.5
4
-2.5V
4
VGS = 0V
0.1
TA = 125°C
25°C
-55°C
0.01
0.001
0.0001
0.2
0.4
0.6
0.8
1
1.2
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDG6302P Rev.F
