FDG6306P
P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
Features
This P
-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications wih a wide range of gate
t
drive voltage (2.5V – 12V).
• –0.6 A, –20 V.
RDS(ON) = 420 mΩ @ V GS = –4.5 V
RDS(ON) = 630 mΩ @ V GS = –2.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
Applications
• Battery management
• Compact industry standard SC70-6 surface mount
package
• Load switch
S
G
S 1 or 4
6 or 3 D
G 2 or 5
5 or 2 G
D 3 or 6
4 or 1 S
D
D
G
Pin 1
S
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Ratings
Units
V DSS
Drain-Source Voltage
Parameter
–20
V
V GSS
Gate-Source Voltage
± 12
V
ID
Drain Current
–0.6
A
– Continuous
(Note 1)
– Pulsed
–2.0
PD
Power Dissipation for Single Operation
TJ , TSTG
Operating and Storage Junction Temperature Range
(Note 1)
0.3
W
–55 to +150
°C
415
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.06
FDG6306P
7’’
8mm
3000 units
©2001 Fairchild Semiconductor Corporation
FDG6306P Rev C(W)
FDG6306P
February 2001
FDG6306P
Typical Characteristics
2.5
-ID , DRAIN CURRENT (A)
VGS = -4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
-3.5V
1.6
-3.0V
-2.5V
1.2
0.8
-2.0V
0.4
2.25
2
VGS = -2.5V
1.75
1.5
-3.0V
1.25
-3.5V
-4.0V
-4.5V
1
0.75
0
0
0.5
1
1.5
2
2.5
0
3
0.5
Figure 1. On-Region Characteristics.
1.5
2
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.2
1.4
ID = -0.3 A
ID = -0.6A
VGS = -4.5V
1.3
RDS(ON) ON-RESISTANCE (OHM)
,
RDS(ON) NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
1
-ID , DRAIN CURRENT (A)
-V DS, DRAIN-SOURCE VOLTAGE (V)
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
1
0.8
o
T A = 125 C
0.6
o
T A = 25 C
0.4
0.2
1.5
150
2
2.5
3
3.5
4
4.5
5
o
T J, JUNCTION TEMPERATURE ( C)
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
2
o
TA = -55 C
VGS = 0V
o
-IS, REVERSE DRAIN CURRENT (A)
VD S = -5V
25 C
o
-I D, DRAIN CURRENT (A)
125 C
1.5
1
0.5
0
0.5
1
o
TA = 125 C
0.1
o
25 C
0.01
o
-55 C
0.001
0.0001
1
1.5
2
2.5
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG6306P Rev C (W)
