FDS6982
Dual N-Channel, Notebook Power Supply MOSFET
General Description
Features
This part is designed to replace two single SO-8 MOSFETs
in synchronous DC:DC power supplies that provide the
various peripheral voltage rails required in notebook
computers and other battery powered electronic devices.
FDS6982 contains two unique 30V, N-channel, logic level,
PowerTrench® MOSFETs designed to maximize power
conversion efficiency.
•
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-side
switch (Q2) is optimized for low conduction losses (less
than 20mΩ at VGS = 4.5V).
Q2: 8.6A, 30V. RDS(on) = 0.015 Ω @ VGS = 10V
RDS(on) = 0.020 Ω @ VGS = 4.5V
•
Q1: 6.3A, 30V. RDS(on) = 0.028 Ω @ VGS = 10V
RDS(on) = 0.035 Ω @ VGS = 4.5V
•
Fast switching speed.
•
High performance trench technology for extremely
low RDS(ON).
Applications
• Battery powered synchronous DC:DC converters.
• Embedded DC:DC conversion.
D1
D1
5
D2
4
Q1
D2
6
G2
pin 1
Q2
S1
8
S2
Absolute Maximum Ratings
Symbol
2
7
G1
SO-8
3
1
T A = 25°C unless otherwise noted
Parameter
Q2
Q1
Units
V DSS
Drain-Source Voltage
30
30
V
V GSS
Gate-Source Voltage
ID
Drain Current
±20
8.6
±20
6.3
A
PD
Power Dissipation for Dual Operation
- Continuous
(Note 1a)
- Pulsed
Power Dissipation for Single Operation
30
20
2
(Note 1a)
W
1.6
(Note 1b)
1
(Note 1c)
TJ, Tstg
V
0.9
Operating and Storage Junction Temperature Range
-55 to +150
°C
°C/W
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
40
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDS6982
FDS6982
13”
12mm
2500 units
1999 Fairchild Semiconductor Corporation
FDS6982, Rev. D1
FDS6982
June 1999
Symbol
(continued)
Parameter
Switching Characteristics
td(on)
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Typ
Max Units
(Note 2)
Turn-Off Delay Time
tf
Type Min
Turn-On Rise Time
td(off)
Test Conditions
Turn-On Delay Time
tr
TA = 25°C unless otherwise noted
Gate-Drain Charge
VDD = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6 Ω
Q2
VDS = 15 V, ID = 8.6 A, VGS = 5 V
Q1
VDS = 15 V, ID = 6.3 A,VGS = 5 V
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
15
10
11
14
36
21
18
7
18.5
8.5
7.3
2.4
6.2
3.1
27
18
20
25
58
34
29
14
26
12
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A
VGS = 0 V, IS = 1.3 A
Voltage
(Note 2)
(Note 2)
Q2
Q1
Q2
Q1
0.72
0.74
1.3
1.3
1.2
1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.Thermal rating based on independant
single device opperation.
a) 78° C/W when
mounted on a 0.5 in2
pad of 2 oz. copper.
b) 125° C/W when
mounted on a 0.02 in2
pad of 2 oz. copper.
c) 135° C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDS6982, Rev. D1
FDS6982
Electrical Characteristics
