SSM6N17FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N17FU
High Speed Switching Applications
Analog Switch Applications
Unit: mm
•
Suitable for high-density mounting due to compact package
•
High drain-source voltage
•
High speed switching
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Gate-Source voltage
Unit
VDS
Drain-Source voltage
Rating
50
V
V
VGSS
ID
100
Pulse
Drain current
±7
DC
IDP
200
Drain power dissipation (Ta = 25°C)
PD(Note 1)
mA
200
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
JEITA
SC-70 (6pin)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-2J1C
absolute maximum ratings.
Weight: 6.8 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Total rating,Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 6)
0.8 mm
0.4 mm
Marking
6
Equivalent Circuit
5
4
6
2
4
Q1
DM
1
5
Q2
3
1
2
3
This transistor is a electrostatic sensitive device. Please handle with caution.
1
2007-11-01
SSM6N17FU
(Q1, Q2 Common)
ID – VDS
ID – VGS
100
1000
Common source
Common source
5
Ta = 25°C
4.5
100
(mA)
4
60
Drain current ID
Drain current ID
(mA)
80
40
VGS = 2.5 V
20
VDS = 3 V
10
1 Ta = 150°C
0.1
75°C
25°C
0.01
0
0
0.4
0.8
1.2
Drain-Source voltage
1.6
0.001
0
2
VDS (V)
−25°C
1
2
RDS (ON) – ID
VGS (V)
30
ID = 10 mA
Drain-Source on resistance
RDS (ON) (Ω)
Drain-Source on resistance
RDS (ON) (Ω)
7
Common source
VGS = 2.5 V
4V
10
5
3
1
3
5
10
30
50
30
VGS = 2.5 V
20
4V
10
0
−50
100
Drain current ID (mA)
0
50
RDS (ON) – VGS
⎪Yfs⎪ – ID
Forward transfer admittance
⎪Yfs⎪ (mS)
Ta = 25°C
30
20
100 mA
ID = 10 mA
4
Gate-Source voltage
6
150
500
Common source
2
100
Ambient temperature Ta (°C)
40
Drain-Source on resistance
RDS (ON) (Ω)
6
RDS (ON) – Ta
Common source
0
0
5
40
50 Ta = 25°C
10
4
Gate-Source voltage
100
1
0.5
3
8
Common source
300 VDS = 3 V
Ta = 25°C
100
50
30
10
1
10
VGS (V)
3
5
10
30
50
100
Drain current ID (mA)
3
2007-11-01
