FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-13101-4E
Memory FRAM
CMOS
256 K (32 K × 8) Bit
MB85R256
■ DESCRIPTIONS
The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM MB85R256 is able to retain data without back-up battery.
The memory cells used for the MB85R256 has inproved at least 1010 times of read/write access per bit, significantly
outperforming FLASH memory and EEPROM in durability.
The MB85R256 uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.
■ FEATURES
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Bit configuration: 32,768 words x 8 bits
Read/write durability: 1010 times/bit (Min)
Peripheral circuit CMOS construction
Operating power supply voltage: 3.0 V to 3.6 V
Operating temperature range: −40 °C to +85 °C
28-pin, SOP flat package
28-pin, TSOP(1) flat package
■ PACKAGES
28-pin plastic SOP
28-pin plastic TSOP(1)
(FPT-28P-M17)
(FPT-28P-M03)
