Ordering number : ENN7787
2SC5947
NPN Triple Diffused Planar Silicon Transistor
2SC5947
Switching Regulator Applications
Features
10.2
3.0
9.9
•
[2SC5947]
4.5
1
0.8
2
3
1.2
2.55
2.7
2.55
2.55
Specifications
1.3
1.4
•
unit : mm
2069C
0 to 0.3
0.4
1.35
•
High breakdown voltage.
High reliability.
High-speed switching.
Wide ASO.
Adoption of MBIT process.
1.5max
8.8
•
Package Dimensions
0.8
•
2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
700
V
VCES
700
V
VCEO
400
V
VEBO
Collector-to-Emitter Voltage
VCBO
8
V
7
A
IC
ICP
Collector Dissipation
PC
Junction Temperature
14
Tstg
Tc=25°C
A
1.65
Tj
Storage Temperature
PW≤300µs, Duty cycle≤10%
W
45
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
Ratings
min
typ
max
Unit
10
µA
10
VCB=400V, IE=0
VEB=5V, IC=0
µA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
63004KB TS IM TA-101157 No.7787-1/4
