PD - 97018A
IRF1405ZPbF
IRF1405ZSPbF
IRF1405ZLPbF
Features
l
l
l
l
l
l
HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
D
VDSS = 55V
RDS(on) = 4.9mΩ
G
Description
ID = 75A
S
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
TO-220AB
IRF1405ZPbF
D2Pak
TO-262
IRF1405ZSPbF IRF1405ZLPbF
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
150
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
75
600
PD @TC = 25°C Power Dissipation
230
W
1.5
± 20
W/°C
V
270
mJ
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
d
Ã
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
h
A
110
420
Storage Temperature Range
g
See Fig.12a, 12b, 15, 16
A
mJ
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
y
Mounting Torque, 6-32 or M3 screw
y
10 lbf in (1.1N m)
Thermal Resistance
Typ.
Max.
RθJC
Junction-to-Case
Parameter
–––
0.65
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
–––
62
RθJA
Junction-to-Ambient (PCB Mount, steady state)
–––
40
i
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
07/14/10
