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2SC3353
isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3353 · DESCRIPTION ·Collector-Emiiter Sustaining Voltage: VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications. .cn mi e ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL scs .i PARAMETER ww VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w VALUE UNIT 800 V 500 V 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 3 A Collector Power Dissipation @Ta=25℃ 2 B PC W Collector Power Dissipation @TC=25℃ Tj Tstg 40 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website:www.iscsemi.cn
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