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2SC5865TLQ
High voltage discharge, High speed switching, Low Noise (60V, 1A) 2SC5865 Features 1) High speed switching. ( Tf : Typ. : 50ns at IC = 1.0A) 2) Low saturation voltage, typically. (Typ. : 200mV at IC = 500mA, IB = 50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements the 2SA2092. Dimensions (Unit : mm) TSMT3 1.0MAX 2.9 0.85 0.4 0.7 1.6 2.8 (3) 0.3~0.6 0~0.1 (2) (1) 0.95 0.95 (1) Base (2) Emitter (3) Collector Applications High speed switching, Low noise 1.9 0.16 Each lead has same dimensions Abbreviated symbol : VU Structure NPN Silicon epitaxial planar transistor Packaging specifications Package Type Taping TL Code Basic ordering unit (pieces) 3000 2SC5865 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V IC 1.0 A ICP 2.0 A PC 500 Collector current Power dissipation Junction temperature Range of storage temperature ∗1 mW ∗2 Tj 150 °C Tstg −55 to +150 °C ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.A Data Sheet 1000 IC/IB=10/1 TRANSITION FREQUENCY : fT (MHz) BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) 10 Ta= −40°C 1 Ta=25°C Ta=125°C 0.1 0.001 Ta=25°C VCE=10V 100 10 1 0.001 0.01 0.1 1 0.01 10 0.1 1 10 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 2SC5865 10 1 0.1 1 10 100 Fig.9 Collector output capacitance Fig.8 Transition frequency Fig.7 Base-emitter saturation voltage vs. collector current Ta=25°C f=1MHz COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) 100 COLLECTOR CURRENT : IC (A) 10 1 Ta=125°C Ta=25°C 0.1 Ta=−40°C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 BASE TO EMITTER VOLTAGE : VBE (V) Fig.10 Ground emitter propagation characteristics Switching characteristics measurement circuits RL=25Ω VIN IB1 IC VCC 25V PW IB2 PW 50 S Duty cycle 1% IB1 IB2 BASE CURRENT WAVEFORM 90% IC COLLECTOR CURRENT WAVEFORM 10% Ton www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. Tstg Tf 3/3 2011.03 - Rev.A
ROHM
ローム株式会社
日本
炭素皮膜抵抗の特許を元に創業した。社名のROHM（R:抵抗 Ohm:抵抗を示す単位）はそこに由来する。その後、大規模集積回路の製造を手がけ始め、現在は様々な機能を顧客の要望に応じてLSI上に集積するカスタムLSIが主力となっている。
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