Features
• 2.7 to 3.6V Supply
– Full Read and Write Operation
• Low Power Dissipation
•
•
•
•
•
•
•
– 8 mA Active Current
– 50 µA CMOS Standby Current
Read Access Time - 250 ns
Byte Write - 3 ms
Direct Microprocessor Control
– DATA Polling
– READ/BUSY Open Drain Output on TSOP
High Reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
Low Voltage CMOS Compatible Inputs and Outputs
JEDEC Approved Byte Wide Pinout
Commercial and Industrial Temperature Ranges
16K (2K x 8)
Battery-Voltage™
Parallel
EEPROMs
Description
The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory
organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable
nonvolatile CMOS technology.
(continued)
AT28BV16
Pin Configurations
Pin Name
A0 - A10
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
RDY/BUSY
Ready/Busy Output
NC
No Connect
DC
Don’t Connect
TSOP
Top View
Function
OE
NC
A9
A8
NC
WE
VCC
RDY/BUSY
NC
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
A8
A9
WE
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
4
3
2
1
32
31
30
24
23
22
21
20
19
18
17
16
15
14
13
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
14
15
16
17
18
19
20
1
2
3
4
5
6
7
8
9
10
11
12
I/O1
I/O2
GND
DC
I/O3
I/O4
I/O5
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
PLCC
Top View
A7
NC
NC
DC
VCC
WE
NC
PDIP, SOIC
Top View
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A8
A9
NC
NC
OE
A10
CE
I/O7
I/O6
Rev. 0380B–10/98
1
