019V33
CY7C1019BV33
CY7C1018BV33
128K x 8 Static RAM
Features
• High speed
— tAA = 10 ns
• CMOS for optimum speed/power
• Center power/ground pinout
• Automatic power-down when deselected
• Easy memory expansion with CE and OE options
• Functionally equivalent to CY7C1019V33 and/or
CY7C1018V33
Functional Description
The CY7C1019BV33/CY7C1018BV33 is a high-performance
CMOS static RAM organized as 131,072 words by 8 bits. Easy
memory expansion is provided by an active LOW Chip Enable
(CE), an active LOW Output Enable (OE), and three-state drivers. This device has an automatic power-down feature that
significantly reduces power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1019BV33 is available in standard 32-pin TSOP
Type II and 400-mil-wide package. The CY7C1018BV33 is
available in a standard 300-mil-wide package.
Logic Block Diagram
Pin Configurations
SOJ / TSOPII
Top View
A0
A1
A2
A3
I/O0
INPUT BUFFER
CE
I/O0
I/O1
VCC
V SS
I/O1
I/O2
SENSE AMPS
ROW DECODER
A0
A1
A2
A3
A4
A5
A6
A7
A8
512 x 256 x 8
ARRAY
I/O3
I/O2
I/O3
WE
A4
A5
A6
A7
I/O4
I/O5
CE
COLUMN
DECODER
I/O6
POWER
DOWN
I/O7
OE
A16
A15
A14
A13
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
I/O7
I/O6
VSS
VCC
I/O5
I/O4
A12
A11
A10
A9
A8
A9
A 10
A 11
A 12
A 13
A 14
A 15
A 16
WE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Selection Guide
7C1019BV33-10
7C1018BV33-10
7C1019BV33-12
7C1018BV33-12
7C1019BV33-15
7C1018BV33-15
Maximum Access Time (ns)
10
12
15
Maximum Operating Current (mA)
175
160
145
Maximum Standby Current (mA)
5
L
Cypress Semiconductor Corporation
•
3901 North First Street
5
5
−
0.5
0.5
•
San Jose
•
CA 95134
•
408-943-2600
June 11, 2001
