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2SK3541T2L
2SK3541 Transistor 2.5V Drive Nch MOS FET 2SK3541 External dimensions (Unit : mm) Structure Silicon N-channel MOSFET 1.2 0.32 0.2 VMT3 (3) 0.8 1.2 Applications Interfacing, switching (30V, 100mA) (1)(2) 0.4 0.4 0.2 0.22 0.13 0.5 0.8 Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. (1)Gate (2)Source (3)Drain Packaging specifications Package Equivalent circuit Taping Code Drain T2L Basic ordering unit (pieces) Type Abbreviated symbol : KN 8000 2SK3541 Gate Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V ID ±100 mA IDP∗1 ±400 mA Total power dissipation PD∗2 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 ∗ Gate Protection Diode °C Parameter Continuous Drain current Pulsed Source ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded. ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands. Rev.B 1/3
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