RN2112F,RN2113F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2112F,RN2113F
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit in mm
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1112F, RN1113F
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
JEDEC
Characteristic
―
JEITA
―
Symbol
Rating
Unit
Collector-base voltage
VCBO
−50
V
TOSHIBA
Collector-emitter voltage
VCEO
−50
V
Weight: 2.3 mg (typ.)
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−100
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
150
°C
Tstg
−55~150
°C
Storage temperature range
2−2HA1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
