RN2114F∼RN2118F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2114F,RN2115F,RN2116F,RN2117F,RN2118F
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1114F~RN1118F
Equivalent Circuit and Bias Resister Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN2114F
1
10
RN2115F
2.2
10
RN2116F
4.7
10
RN2117F
10
4.7
RN2118F
47
10
ESM
JEDEC
―
JEITA
―
TOSHIBA
2−2HA1A
Weight: 0.0023g
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Symbol
RN2114F~2118F
Rating
Unit
VCBO
−50
V
VCEO
−50
V
RN2114F
RN2115F
Emitter-base voltage
−5
−6
RN2116F
VEBO
−7
RN2117F
−15
RN2118F
−25
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V
IC
RN2114F~2118F
−100
mA
PC
100
mW
Tj
150
°C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
