Power MOSFET
HiPerFETTM
Single MOSFET Die
IXFN44N80
VDSS
ID25
RDS(on)
= 800V
=
44A
≤ 0.165Ω
Ω
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
miniBLOC, SOT-227 B (IXFN)
E153432
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
800
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
800
V
VGSS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C, Chip capability
IDM
TC = 25°C, pulse width limited by TJM
IAR
44
S
G
S
D
A
176
A
TC = 25°C
44
A
EAR
TC = 25°C
64
mJ
EAS
TC = 25°C
4
J
dV/dt
IS
5
V/ns
700
W
-55 ... +150
°C
with Aluminium nitride
isolation
•Low RDS (on) HDMOSTM process
TJM
150
°C
•Rugged polysilicon gate cell
Tstg
-55 ... +150
°C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 1Ω
PD
TC = 25°C
TJ
VISOL
Md
50/60 Hz, RMS
IISOL ≤ 1mA
t = 1min
t = 1s
Mounting torque
Terminal connection torque
Weight
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VGS = 0V, ID = 3mA
800
VGS(th)
VDS = VGS, ID = 8mA
2.5
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
© 2007 IXYS CORPORATION, All rights reserved
V
4.5
V
±200
TJ = 125°C
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•International standard packages
•miniBLOC,
structure
•Unclamped Inductive Switching
(UIS) rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
•DC-DC converters
•Battery chargers
•Switched-mode and resonant-mode
Characteristic Values
Min.
Typ.
Max.
BVDSS
G = Gate
S = Source
power supplies
• DC choppers
•Temperature and lighting controls
nA
100 μA
2 mA
Advantages
• Easy to mount
Ω
• Space savings
0.165
DS98594E(08/07)
