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2N1616
2N1616 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON TRANSISTOR 1 0 .1 6 (0 .4 0 0 ) 1 7 .2 7 (0 .6 8 0 ) 1 9 .0 5 (0 .7 5 0 ) m in . ! • Bipolar Power Transistor 1 5 .4 2 (0 .6 0 7 ) m a x . • TO–61 Hermetic Package 7 .6 2 (0 .3 0 0 ) 8 .8 9 (0 .3 5 0 ) • High Current Switching 1 1 .1 7 6 (0 .4 4 0 ) 2 .7 9 4 (0 .1 1 0 ) • LF Large Signal Amplification 2 .2 8 6 (1 /4 ) U N F 2 A TO–61 Metal Package. Pin 1 – Emitter Pin 2 – Base Case – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage 60V VCEO Collector – Emitter Voltage 60V VEBO Emitter – Base Voltage 8V IC Continuous Collector Current 5A PD Total Device Dissipation Derate above 100°C TSTG , TJ Storage and Operating Junction Temperature Range 85W 570 mW/°C –65 to +175°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5643 Issue 1
TI
Texas Instruments Incorporated
U.S.A
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