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2N1666
2N1666 Transistors Ge PNP Power BJT Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)90õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)6.0 @I(B) (A) (Test Condition)1.0 h(FE) Min. Current gain.15 h(FE) Max. Current gain.30 @I(C) (A) (Test Condition)6.0 @V(CE) (V) (Test Condition)1.0 f(T) Min. (Hz) Transition Freq2.0k @I(C) (A) (Test Condition)4.0 @V(CE) (V) (Test Condition)6.0 t(r) Max. (s) Rise time30u t(f) Max. (s) Fall time.50u Package StyleTO-3
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