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2SC3307
2SC3307 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3307 Industrial Applications High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications • Excellent switching times: tr = 1.0 μs (max), tf = 1.0 μs (max) • Unit: mm High collector breakdown voltage: VCEO = 800 V (IC = 5 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 900 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 7 V DC IC 10 Pulse ICP 15 Base current IB 3 Collector power dissipation (Tc = 25°C) PC Junction temperature Collector current Storage temperature range A JEDEC ― A JEITA ― 150 W TOSHIBA Tj 150 °C Weight: 9.75 g (typ.) Tstg −55 to 150 °C 2-21F1A Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-07-17
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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