2SC3307
TOSHIBA Transistor
Silicon NPN Triple Diffused Type
2SC3307
Industrial Applications
High-Speed and High-Voltage Switching Applications
Switching Regulator Applications
High-Speed DC-DC Converter Applications
•
Excellent switching times: tr = 1.0 μs (max), tf = 1.0 μs (max)
•
Unit: mm
High collector breakdown voltage: VCEO = 800 V
(IC = 5 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
900
V
Collector-emitter voltage
VCEO
800
V
Emitter-base voltage
VEBO
7
V
DC
IC
10
Pulse
ICP
15
Base current
IB
3
Collector power dissipation
(Tc = 25°C)
PC
Junction temperature
Collector current
Storage temperature range
A
JEDEC
―
A
JEITA
―
150
W
TOSHIBA
Tj
150
°C
Weight: 9.75 g (typ.)
Tstg
−55 to 150
°C
2-21F1A
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-07-17