April 1998
FDS6680
Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET
General Description
Features
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
11.5 A, 30 V. RDS(ON) = 0.010 Ω @ VGS = 10 V
RDS(ON) = 0.015 Ω @ VGS = 4.5 V.
The MOSFET features faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
PWM controllers.
The result is a MOSFET that is easy and safer to drive (even
at very high frequencies), and DC/DC power supply designs
with higher overall efficiency.
Low gate charge (typical Qg = 19 nC).
SOT-23
SuperSOTTM-6
SuperSOTTM-8
Optimized for use in switching DC/DC converters with
Very fast switching.
SO-8
SOT-223
SOIC-16
5
6
1
TA = 25oC unless other wise noted
Parameter
VDSS
2
8
Symbol
3
7
Absolute Maximum Ratings
4
Drain-Source Voltage
FDS6680
VGSS
Gate-Source Voltage
ID
Drain Current - Continuous
PD
Power Dissipation for Single Operation
Units
30
V
±20
V
(Note 1a)
11.5
A
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
1
- Pulsed
TJ,TSTG
50
Operating and Storage Temperature Range
W
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
© 1998 Fairchild Semiconductor Corporation
FDS6680 Rev.E1
Typical Electrical Characteristics
3
VGS= 10V
4.5
40
R DS(ON) , NORMALIZED
4.0
6.0
5.0
30
3.5
20
10
3.0
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
50
0
0
0.5
1
1.5
2
2
4.5
6.0
1
0.8
0
25
50
75
100
125
DRAIN-SOURCE ON-RESISTANCE
1.2
Figure 3. On-Resistance Variation
Temperature.
50
50
0.03
0.02
TA = 125 oC
0.01
T A = 25 o C
0
150
2
4
V
GS
with
50
I S , REVERSE DRAIN CURRENT (A)
25°C
40
125°C
30
20
10
0
2
3
4
VGS , GATE TO SOURCE VOLTAGE (V)
6
8
10
,GATE-SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
TJ = -55°C
VDS = 10V
I D , DRAIN CURRENT (A)
40
I D = 11.5A
TJ , JUNCTION TEMPERATURE (°C)
1
30
0.04
1.4
0
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
R DS(ON) ,(OHM)
RDS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10
I D , DRAIN CURRENT (A)
V GS =10V
-25
10
1
0
ID = 11.5A
0.6
-50
5.0
0.5
2.5
Figure 1. On-Region Characteristics.
1.6
4.0
1.5
VDS , DRAIN-SOURCE VOLTAGE (V)
1.8
VGS = 3.5V
2.5
5
VGS =0V
10
TJ = 125°C
1
25°C
0.1
-55°C
0.01
0.001
0.0001
0.2
0.4
0.6
0.8
1
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6680 Rev.E1
