FDS6688
30V N-Channel PowerTrench® MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
• 16 A, 30 V.
RDS(ON) = 6 mΩ @ VGS = 10 V
RDS(ON) = 7 mΩ @ VGS = 4.5 V
• Ultra-low gate charge (40 nC typical)
Applications
• High performance trench technology for extremely
low RDS(ON)
• DC/DC converter
• High power and current handling capability
DD
D
D
5
6
G
S G
S
S
S S
S
SO-8
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
3
2
8
D
D
4
7
D
D
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
16
A
– Continuous
(Note 1a)
– Pulsed
50
Power Dissipation for Single Operation
2.5
1.4
(Note 1c)
TJ, TSTG
(Note 1a)
(Note 1b)
PD
1.2
Operating and Storage Junction Temperature Range
W
–55 to +175
°C
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6688
FDS6688
13’’
12mm
2500 units
©2004 Fairchild Semiconductor Corporation
FDS6688 Rev D(W)
FDS6688
January 2004
FDS6688
Typical Characteristics
50
2.2
ID, DRAIN CURRENT (A)
5.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
4.5V
40
3.5V
3.0V
30
20
10
0
2
VGS = 3.0V
1.8
1.6
3.5V
1.4
4.0V
1.2
4.5V
6.0V
10V
1
0.8
0
0.25
0.5
0.75
1
0
10
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
50
0.014
ID = 16A
VGS = 10V
1.6
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
40
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
1.4
1.2
1
0.8
0.6
ID = 8A
0.011
TA = 125oC
0.008
0.005
TA = 25oC
0.002
-50
-25
0
25
50
75
100
125
150
2
175
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
o
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
150
100
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
30
ID, DRAIN CURRENT (A)
120
90
60
TA =125oC
30
25oC
-55oC
VGS = 0V
10
TA = 125oC
1
0.1
25oC
0.01
-55oC
0.001
0.0001
0
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6688 Rev D(W)
