FDS6812A
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
• 6.7 A, 20 V.
• Low gate charge (12 nC typical)
• High performance trench technology for extremely
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
low RDS(ON)
• High power and current handling capability
DD1
D1
D
D2
D
RDS(ON) = 22 mΩ @ VGS = 4.5 V
RDS(ON) = 35 mΩ @ VGS = 2.5 V
5
D2
D
6
4
Q1
3
7
SO-8
Pin 1 SO-8
G2
S2 S
8
S
2
Q2
1
S
Absolute Maximum Ratings
Symbol
G1
S1 G
o
TA=25 C unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current
6.7
A
PD
Power Dissipation for Dual Operation
– Continuous
(Note 1a)
– Pulsed
35
2
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
1
(Note 1c)
TJ, TSTG
W
1.6
0.9
–55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6812A
FDS6812A
13’’
12mm
2500 units
©2001 Fairchild Semiconductor Corporation
FDS6812A Rev B (W)
FDS6812A
November 2001
FDS6812A
Typical Characteristics
2.5
30
ID, DRAIN CURRENT (A)
3.0V
3.5V
25
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 4.5V
2.5V
2.0V
20
15
10
5
2
VGS = 2.0V
1.5
2.5V
3.0V
3.5V
0
0.5
1
1.5
2
2.5
0
3
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.07
1.8
ID = 6.7A
VGS = 4.5V
1.6
ID = 3.4 A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
0.5
0
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
0.06
0.05
0.04
TA =
125oC
0.03
0.02
TA = 25oC
0.01
0
175
1
o
2
TJ , JUNCTION TEMPERATURE ( C)
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
30
TA = -55 C
IS, REVERSE DRAIN CURRENT (A)
o
VDS = 5V
25oC
25
ID, DRAIN CURRENT (A)
4.0V
1
o
125 C
20
15
10
5
VGS = 0V
10
TA = 125oC
1
25oC
0.1
o
-55 C
0.01
0.001
0.0001
0
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6812A Rev B (W)
