DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3056
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
ORDERING INFORMATION
DESCRIPTION
The 2SK3056 is N-Channel MOS Field Effect Transistor
PART NUMBER
PACKAGE
2SK3056
TO-220AB
2SK3056-S
TO-262
2SK3056-ZJ
TO-263
2SK3056-Z
TO-220SMD
designed for high current switching applications.
FEATURES
• Low On-state Resistance
5
RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 16 A)
5
RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 16 A)
Note
Note TO-220SMD package is produced only in
• Low Ciss : Ciss = 920 pF TYP.
Japan.
• Built-in Gate Protection Diode
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
±20
V
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
+20, −10
V
ID(DC)
±32
A
ID(pulse)
±100
A
Total Power Dissipation (TC = 25°C)
PT1
34
W
Total Power Dissipation (TA = 25°C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Drain Current (DC) (TC = 25°C)
Drain Current (pulse)
Note1
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
16
A
Single Avalanche Energy
Note2
EAS
25.6
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
5
(TO-262)
(TO-263, TO-220SMD)
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13095EJ2V0DS00 (2nd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1998,1999, 2001
