DATA SHEET
SILICON TRANSISTOR
2SB1453
PNP SILICON EPITAXIAL POWER TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SB1453 is a power transistor that can directly drive from
PACKAGE DRAWING (UNIT: mm)
the IC output. This transistor is ideal for motor drivers and solenoid
drivers in such as OA and FA equipment.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High DC current amplifier ratio
hFE ≥ 100 (VCE = −5 V, IC = −0.5 A)
• Mold package that does not require an insulating board or
insulation bushing
Electrode Connection
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
1. Base
2. Collector
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−60
V
Collector to emitter voltage
VCEO
−60
V
Emitter to base voltage
VEBO
−7.0
V
Collector current (DC)
IC(DC)
−3.0
A
IC(pulse)*
−6.0
A
IB(DC)
−1.0
A
Total power dissipation
PT (Tc = 25°C)
25
W
Total power dissipation
PT (Ta = 25°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Collector current (pulse)
Base current (DC)
3. Emitter
* PW ≤ 10 ms, duty cycle ≤ 50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16129EJ2V0DS00 (2nd edition)
Date Published July 2002 N CP(K)
Printed in Japan
©
2002
1998