2SK3648-01
200304
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings [mm]
TO-220AB
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Symbol
V DS
VDSX *5
ID
ID(puls]
VGS
IAR *2
EAS *1
dVDS/dt *4
dV/dt *3
PD Ta=25°C
Tc=25°C
Tch
Tstg
Ratings
150
120
±33
±132
±30
33
169
20
5
2.02
150
+150
-55 to +150
Unit
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
°C
°C
<
*1 L=228µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph
*2 Tch=150°C
<
<
<
<
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C *4 VDS = 150V *5 VGS=-30V
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Symbol
V(BR)DSS
VGS(th)
Zero gate voltage drain current
IDSS
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
V SD
t rr
Qrr
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250µA
VGS=0V
ID= 250µA
VDS=VGS
VDS=150V VGS=0V
Tch=25°C
Tch=125°C
VDS=120V VGS=0V
VGS=±30V VDS=0V
ID=11.5A VGS=10V
ID=11.5A VDS=25V
VDS =75V
VGS=0V
f=1MHz
VCC=48V ID=11.5A
VGS=10V
Min.
150
3.0
10
54
16
1150
200
17
13
15
34
15
34
9
12.5
8
RGS=10 Ω
V CC =48V
ID=23A
VGS=10V
L=228µH Tch=25°C
IF=23A VGS=0V Tch=25°C
IF=23A VGS=0V
-di/dt=100A/µs Tch=25°C
Typ.
Max.
5.0
25
250
100
70
1730
300
26
20
23
51
23
51
13.5
19
33
1.10
130
0.6
1.65
Units
V
V
µA
nA
mΩ
S
pF
ns
nC
A
V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.833
62.0
Units
°C/W
°C/W
1
