2SK3697-01 N-CHANNEL SILICON POWER MOSFET 200407 Outline Drawings (mm) FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Symbol VDS VDSX ID Pulsed Drain Current Gate-Source Voltage Non-Repetitive Maximum Avalanche current Repetitive Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery di/dt Max. Power Dissipation ID(puls] VGS IAR Operating and Storage Temperature range Tch Tstg Ratings 600 600 ±42 ±2.7 ±168 ±30 42 Unit V V A A A V A Remarks VGS=-30V Ta=25°C Equivalent circuit schematic Drain(D) Tch < 25°C = < Tch =150°C IAR 21 A EAS 828 mJ Note *2 kV/µs kV/µs A/µs W VDS<600V = Note *3 Note *4 Tc=25°C Ta=25°C Gate(G) dVDS/dt dV/dt -di/dt PD 20 5 100 600 2.50 +150 -55 to +150 Source(S) Note *2:StartingTch=25°C,L= 861µH,VCC=60V See to the ‘Avalanche Energy’ graph Note *3:IF < -ID, -di/dt = 100A/µs,VCC< BVDSS,Tch< 150°C = = = Note *4:IF < -ID, -dV/dt = 5kV/µs,VCC< BVDSS,Tch<150°C = = = °C °C Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS Q GD IAV VSD trr Q rr Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche Capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS=±30V VDS=0V ID=21A VGS=10V Typ. 600 3.0 Tch=25°C Tch=125°C ID=21A VDS=25V VDS=25V VGS=0V f=1MH VCC=300V ID=21A VGS=10V RGS=10 Ω VCC=300V ID=42A VGS=10V L=861µH Tch=25°C 20 Max. 5.0 25 2.0 100 0.17 10 1.0 10 0.14 40 5100 7650 700 1050 48 72 60 90 90 135 180 270 30 45 105 160 44 65 30 45 42 IF=42A VGS=0V Tch=25°C IF=42A VGS=0V -di/dt=100A/µs Tch=25°C 1.10 160 1.00 1.70 250 2.5 Units V V µA mA nA Ω S pF ns nC A V ns µC Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.208 50.0 Units °C/W °C/W 1



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