2SK3697-01
N-CHANNEL SILICON POWER MOSFET
200407
Outline Drawings (mm)
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breakdown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous Drain Current
Symbol
VDS
VDSX
ID
Pulsed Drain Current
Gate-Source Voltage
Non-Repetitive
Maximum Avalanche current
Repetitive
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Peak Diode Recovery di/dt
Max. Power Dissipation
ID(puls]
VGS
IAR
Operating and Storage
Temperature range
Tch
Tstg
Ratings
600
600
±42
±2.7
±168
±30
42
Unit
V
V
A
A
A
V
A
Remarks
VGS=-30V
Ta=25°C
Equivalent circuit schematic
Drain(D)
Tch < 25°C
=
<
Tch =150°C
IAR
21
A
EAS
828
mJ
Note *2
kV/µs
kV/µs
A/µs
W
VDS<600V
=
Note *3
Note *4
Tc=25°C
Ta=25°C
Gate(G)
dVDS/dt
dV/dt
-di/dt
PD
20
5
100
600
2.50
+150
-55 to +150
Source(S)
Note *2:StartingTch=25°C,L= 861µH,VCC=60V
See to the ‘Avalanche Energy’ graph
Note *3:IF < -ID, -di/dt = 100A/µs,VCC< BVDSS,Tch< 150°C
=
=
=
Note *4:IF < -ID, -dV/dt = 5kV/µs,VCC< BVDSS,Tch<150°C
=
=
=
°C
°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Symbol
BVDSS
VGS(th)
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
Q GD
IAV
VSD
trr
Q rr
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche Capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Min.
Test Conditions
ID= 250µA
VGS=0V
ID= 250µA
VDS=VGS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V VDS=0V
ID=21A VGS=10V
Typ.
600
3.0
Tch=25°C
Tch=125°C
ID=21A VDS=25V
VDS=25V
VGS=0V
f=1MH
VCC=300V
ID=21A
VGS=10V
RGS=10 Ω
VCC=300V
ID=42A
VGS=10V
L=861µH Tch=25°C
20
Max.
5.0
25
2.0
100
0.17
10
1.0
10
0.14
40
5100
7650
700
1050
48
72
60
90
90
135
180
270
30
45
105
160
44
65
30
45
42
IF=42A VGS=0V Tch=25°C
IF=42A VGS=0V
-di/dt=100A/µs Tch=25°C
1.10
160
1.00
1.70
250
2.5
Units
V
V
µA
mA
nA
Ω
S
pF
ns
nC
A
V
ns
µC
Thermal characteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.208
50.0
Units
°C/W
°C/W
1
