HOME>在庫検索>在庫情報
IR2117
Data Sheet No. PD60146 Rev O IR2117(S)/IR2118(S) & (PbF) SINGLE CHANNEL DRIVER Features • • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout CMOS Schmitt-triggered inputs with pull-down Output in phase with input (IR2117) or out of phase with input (IR2118) Also available LEAD-FREE VOFFSET 600V max. IO+/- 200 mA / 420 mA VOUT 10 - 20V ton/off (typ.) 125 & 105 ns Packages Description The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600 volts. 8-Lead PDIP IR2117/IR2118 8-Lead SOIC IR2117S/IR2118S Typical Connection up to 600V VCC IN VCC IN COM VB HO TO LOAD VS IR2117 up to 600V VCC IN VCC IN COM (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. www.irf.com VB HO VS IR2118 TO LOAD 1
IR
International Rectifier
U.S.A
パワー・マネジメント向けの半導体製品を中心とする電気機器の製造販売やソリューションを提供する。
弊社からの見積回答メールの返信又はFAXにてお願いします。