FDS6676
30V N-Channel PowerTrench ® MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 14.5 A, 30 V. RDS(ON) = 7 mΩ @ V GS = 10 V
RDS(ON) = 8 mΩ @ V GS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
Applications
•
• Low gate charge (45 nC typ)
DC/DC converter
• High power and current handling capability
D
D
D
5
6
SO-8
S
S
S
Absolute Maximum Ratings
Symbol
Drain Current
– Conti nuous
(Note 1a)
– Pulsed
Units
30
± 16
Gate-Source Voltage
ID
Ratings
Drain-Source Voltage
VGSS
1
T A=25oC unless otherwise noted
Parameter
VDSS
2
8
G
3
7
D
4
V
14.5
A
50
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
PD
1.2
(Note 1c)
TJ, TSTG
V
Operating and Storage Junction Temperature Range
W
1.0
–55 to +175
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6676
FDS6676
13’’
12mm
2500 units
©2003 Fairchild Semiconductor Corporation
FDS6676 Rev D (W)
FDS6676
May 2003
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6676 Rev D (W)
FDS6676
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θJC is guaranteed by design while R θCA is determined by the user's board design.
