January 2000
FDS6690
Single N-Channel Logic Level PWM Optimized PowerTrench® MOSFET
General Description
Features
This N Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional switching
PWM controllers.
The MOSFET features faster switching and lower gate charge
than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at
very high frequencies), and DC/DC power supply designs with
higher overall efficiency.
SuperSOTTM-6
SOT-23
D
D
D
SO-8
SuperSOTTM-8
D
S
Absolute Maximum Ratings
RDS(ON) = 0.0200 Ω @ VGS = 4.5 V.
Optimized for use in switching DC/DC converters with
PWM controllers.
Very fast switching .
Low gate charge (Qg typ = 13 nC).
SO-8
SOT-223
SOIC-16
5
S
S
3
7
2
8
G
4
6
S
FD 9 0
66
pin 1
10 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS = 10 V
1
TA = 25oC unless other wise noted
Symbol
Parameter
FDS6690
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current - Continuous
10
A
(Note 1a)
- Pulsed
(Note 1a)
2.5
(Note 1b)
TJ,TSTG
Power Dissipation for Single Operation
50
1.2
(Note 1c)
PD
Units
1
Operating and Storage Temperature Range
W
-55 to 150
°C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
© 1998 Fairchild Semiconductor Corporation
FDS6690 Rev.C
Typical Electrical Characteristics
3
R DS(on) , NORMALIZED
VGS = 10V 6.0V
5.0V
4.5V
40
4.0V
30
20
3.5V
10
0
0
0.5
1
1.5
DRAIN-SOURCE ON-RESISTANCE
ID , DRAIN-SOURCE CURRENT (A)
50
2
2.5
VGS = 3.5V
2.5
4.5V
5.0V
1.5
5.5V
7.0V
10V
1
0.5
3
4.0V
2
0
10
20
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
R DS(ON) , ON-RESISTANCE (OHM)
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I D = 5A
VGS = 10 V
1.4
1.2
1
0.8
-25
0
25
50
75
100
125
0.04
0.03
0.01
0
150
TA = 125°C
0.02
TA = 25°C
2
4
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
Temperature.
50
20
10
3
4
5
V GS = 0V
10
1
TA= 125°C
25°C
0.1
-55°C
0.01
0.001
0.0001
0
0.2
0.4
V
SD
Figure 5 . Transfer Characteristics.
10
50
30
VGS , GATE TO SOURCE VOLTAGE (V)
8
Figure 4 . On Resistance Variation with
Gate-to-Source Voltage.
with
IS , REVERSE DRAIN CURRENT (A)
I D, DRAIN CURRENT (A)
40
6
V GS , GATE TO SOURCE VOLTAGE (V)
T = -55°C
A
25°C
125°C
VDS = 5V
2
50
0.05
I D = 10 A
0.6
-50
0
40
Figure 2. On-Resistance Variation with
Drain Current and Gate
Voltage.
1.8
1.6
30
I D , DRAIN CURRENT (A)
0.6
0.8
1
1.2
1.4
, BODY DIODE FORWARD VOLTAGE (V)
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6690 Rev.C
