FDS6692
30V N-Channel PowerTrench ® MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 12 A, 30 V.
• High performance trench technology for extremely
low RDS(ON)
Applications
•
RDS(ON) = 12 mΩ @ V GS = 10 V.
RDS(ON) = 14.5 mΩ @ V GS = 4.5 V
• Low gate charge (18 nC typical)
DC/DC converter
• High power and current handling capability
D
D
D
5
6
SO-8
S
S
S
Absolute Maximum Ratings
Symbol
Drain Current
– Continuous
(Note 1a)
– Pulsed
Units
30
± 16
Gate-Source Voltage
ID
Ratings
Drain-Source Voltage
VGSS
1
T A=25oC unless otherwise noted
Parameter
VDSS
2
8
G
3
7
D
4
V
12
A
50
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
PD
1.2
(Note 1c)
TJ, TSTG
V
Operating and Storage Junction Temperature Range
W
1.0
-55 to +175
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6692
FDS6692
13’’
12mm
2500 units
©2003 Fairchild Semiconductor Corporation
FDS6692 Rev D (W)
FDS6692
September 2003
FDS6692
Typical Characteristics
2.25
50
4.5V
6.0V
ID, DRAIN CURRENT (A)
RDS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
40
3.5V
3.0V
30
20
10
2.5V
2
1.75
V GS = 3.0V
1.5
3.5V
1.25
4.5V
6.0V
10V
1
0.75
0
0
0.5
1
1.5
2
0
2.5
10
Figure 1. On-Region Characteristics.
1.6
RDS(ON) , ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
40
50
0.03
ID = 12A
VGS = 10V
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
ID = 6 A
0.025
0.02
o
T A = 125 C
0.015
0.01
o
TA = 25 C
0.005
150
2
o
T J, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
o
o
TA = -55 C
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)
50
25 C
o
125 C
ID , DRAIN CURRENT (A)
30
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
40
30
20
10
0
1.5
20
I D, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS = 0V
10
o
T A = 125 C
1
o
25 C
0.1
o
-55 C
0.01
0.001
0.0001
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.5
0
0.2
0.4
0.6
0.8
1
1.2
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6692 Rev D (W)
