FDS7779Z
30 Volt P-Channel PowerTrench MOSFET
General Description
Features
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
• –16 A, –30 V. RDS(ON) = 7.2 mΩ @ VGS = –10 V
RDS(ON) = 11.5 mΩ @ VGS = – 4.5 V
• ESD protection diode (note 3)
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
• High performance trench technology for extremely
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
• High power and current handling capability
D
D
D
D
5
S
S
S
Absolute Maximum Ratings
Symbol
3
7
2
8
G
4
6
SO-8
VDSS
low RDS(ON)
1
TA=25oC unless otherwise noted
Parameter
Ratings
VGSS
Gate-Source Voltage
ID
Drain Current
PD
Power Dissipation for Single Operation
Units
–30
Drain-Source Voltage
V
±25
– Continuous
(Note 1a)
– Pulsed
V
–16
A
–50
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, TSTG
W
1
–55 to +150
°C
(Note 1a)
50
°C/W
(Note 1)
25
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS7779Z
FDS7779Z
13’’
12mm
2500 units
2003 Fairchild Semiconductor Corporation
FDS7779Z Rev C1 (W)
FDS7779Z
October 2003
FDS7779Z
Typical Characteristics
2.6
VGS = -10V
-4.5V
-ID, DRAIN CURRENT (A)
-6.0V
-3.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
50
40
30
-3.0V
20
10
0
0
0.5
1
1.5
2.4
2.2
VGS = - 3.5V
2
1.8
-4.0V
1.6
-4.5V
1.4
-5.0V
-6.0V
1.2
-8.0V
-10V
1
0.8
2
0
15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
60
0.03
ID = -8A
ID = -16A
VGS = -10V
1.4
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
45
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.5
1.3
1.2
1.1
1
0.9
0.8
0.7
0.03
0.02
TA = 125oC
0.02
0.01
TA = 25oC
0.01
-50
-25
0
25
50
75
100
125
150
175
2
4
o
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
igure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
80
-IS, REVERSE DRAIN CURRENT (A)
25oC
TA = -55oC
VDS = -5V
-ID, DRAIN CURRENT (A)
30
-ID, DRAIN CURRENT (A)
125oC
60
40
20
VGS = 0V
10
TA = 125oC
1
25oC
-55oC
0.1
0.01
0.001
0
1.5
2
2.5
3
3.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS7779Z Rev C1 (W)
