FDS7796
30V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 13 A, 30 V
RDS(ON) = 9 mΩ @ VGS = 10 V
RDS(ON) = 12 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
Applications
• High power and current handling capability
•
DC/DC converter
•
Power management
•
Load switch
D
D
D
• Fast switching
D
S
S
S
Absolute Maximum Ratings
Symbol
3
7
2
8
G
4
6
SO-8
5
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
(Note 1a)
13
A
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
– Continuous
– Pulsed
50
(Note 1c)
TJ, TSTG
W
1.0
–55 to +150
°C
(Note 1a)
50
°C/W
(Note 1)
30
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS7796
FDS7796
13’’
12mm
2500 units
2004 Fairchild Semiconductor Corporation
FDS7796 Rev C1 (W)
FDS7796
March 2004
FDS7796
Typical Characteristics
VGS =10V
6.0V
50
ID, DRAIN CURRENT (A)
2
4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
60
3.5V
40
30
20
3.0V
10
1.8
VGS = 3.5V
1.6
1.4
4.0V
4.5V
1.2
5.0V
10V
0.8
0
0
0.5
1
1.5
2
0
2.5
10
20
Figure 1. On-Region Characteristics.
40
50
60
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.022
1.6
ID = 6.5 A
ID = 13A
VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
30
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
0.02
0.018
0.016
TA = 125oC
0.014
0.012
0.01
TA = 25oC
0.008
0.006
150
2
4
o
TJ, JUNCTION TEMPERATURE ( C)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
70
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
60
ID, DRAIN CURRENT (A)
6.0V
1
50
40
TA =125oC
30
25oC
20
10
-55oC
VGS = 0V
10
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.001
0.0001
0
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS7796 Rev C1 (W)
