FDS7788
30V N-Channel PowerTrench® MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
• 18 A, 30 V. RDS(ON) = 4.0 mΩ @ VGS = 10 V
RDS(ON) = 5.0 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast switching speed
Applications
• High power and current handling capability
• DC/DC converter
• High performance trench technology for extremely
low RDS(ON)
• Load switch
• Motor drives
• RoHS Compliant
D
D
D
D
S
S
S
Absolute Maximum Ratings
Symbol
Drain Current
Ratings
(Note 1a)
– Pulsed
V
±20
– Continuous
Units
30
Gate-Source Voltage
ID
1
TA=25oC unless otherwise noted
Drain-Source Voltage
VGSS
2
8
Parameter
VDSS
3
7
G
4
6
SO-8
5
V
18
A
50
(Note 1a)
PD
661
2.5
(Note 1b)
Drain-Source Avalanche Energy
Power Dissipation for Single Operation
EAS
1.2
(Note 3)
(Note 1c)
TJ, TSTG
mJ
W
1.0
–55 to +150
°C
(Note 1a)
50
°C/W
(Note 1)
30
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS7788
FDS7788
13’’
12mm
2500 units
©2008 Fairchild Semiconductor Corporation
FDS7788 Rev F1 (W)
FDS7788
August 2008
FDS7788
Typical Characteristics
2.2
80
VGS = 10V
4.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
3.5V
4.5V
60
40
20
3.0V
0
VGS = 3.5V
2
1.8
1.6
4.0V
1.4
4.5V
5.0V
1.2
6.0V
10V
1
0.8
0
0.5
1
1.5
0
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
60
80
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.01
1.6
ID = 18A
VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
40
ID, DRAIN CURRENT (A)
1.4
1.2
1
0.8
0.6
ID = 9A
0.008
0.006
TA = 125oC
0.004
TA = 25oC
0.002
0
-50
-25
0
25
50
75
100
125
150
2
4
o
TJ, JUNCTION TEMPERATURE ( C)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
80
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
ID, DRAIN CURRENT (A)
VDS = 5V
60
40
TA =125oC
25oC
20
-55oC
0
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS7788 Rev F1 (W)
