FDS7766
30V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
• 17 A, 30 V
Applications
• High power and current handling capability
• Synchronous rectifier
• Fast switching
• High performance trench technology for extremely
low RDS(ON)
• DC/DC converter
D
D
RDS(ON) = 5 mΩ @ VGS = 10 V
RDS(ON) = 6 mΩ @ VGS = 4.5 V
D
5
6
SO-8
S
S
S
Absolute Maximum Ratings
Symbol
Drain Current
(Note 1a)
– Pulsed
V
±16
– Continuous
Units
30
Gate-Source Voltage
ID
Ratings
Drain-Source Voltage
VGSS
1
TA=25oC unless otherwise noted
Parameter
VDSS
2
8
G
3
7
D
4
V
17
A
60
Power Dissipation for Single Operation
2.5
1.2
(Note 1c)
TJ, TSTG
(Note 1a)
(Note 1b)
PD
1.0
Operating and Storage Junction Temperature Range
–55 to +150
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS7766
FDS7766
13’’
12mm
2500 units
2003 Fairchild Semiconductor Corporation
FDS7766 Rev E (W)
FDS7766
March 2003
FDS7766
Typical Characteristics
60
2.2
VGS = 10V
4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
50
3.5V
3.0V
40
30
2.5V
20
10
0
0
0.25
0.5
0.75
1
2
1.8
VGS = 3.0V
1.6
3.5V
1.4
4.0V
4.5V
1.2
6.0V
10V
1
0.8
1.25
0
10
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
50
60
0.014
ID = 8.5A
ID = 17A
VGS = 10V
1.6
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
40
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
1.4
1.2
1
0.8
0.6
0.012
0.01
0.008
TA = 125oC
0.006
0.004
TA = 25oC
0.002
0
-50
-25
0
25
50
75
100
125
150
175
2
4
o
TJ, JUNCTION TEMPERATURE ( C)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
60
100
IS, REVERSE DRAIN CURRENT (A)
VDS = 5.0V
50
ID, DRAIN CURRENT (A)
30
ID, DIRAIN CURRENT (A)
40
30
TA = 125oC
20
25oC
10
-55oC
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS7766 Rev E (W)
