1SS396
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
1SS396
Low Voltage High Speed Switching
Unit: mm
Low forward voltage
: VF (3) = 0.54V (typ.)
Low reverse current
: IR = 5μA (max.)
Small package
: SC-59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
VRM
45
V
Reverse voltage
VR
40
V
Maximum (peak) forward current
IFM
300 *
mA
Maximum (peak) reverse Voltage
Average forward current
IO
100 *
mA
IFSM
1*
A
Power dissipation
P
150 *
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55∼125
°C
Operating temperature range
Topr
−40∼100
°C
Surge current (10ms)
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
1-3G1G
Weight: 0.012g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
VF (1)
Characteristic
―
VF (2)
Min
Typ.
Max
IF = 1mA
―
0.28
―
―
IF = 10mA
―
0.36
―
VF (3)
―
IF = 100mA
―
0.54
0.60
Reverse current
IR
―
VR = 40V
―
―
5
μA
Total capacitance
CT
―
VR = 0, f = 1MHz
―
18
25
pF
Forward voltage
Test Condition
Unit
V
Marking
1
2007-11-01