Order this document
by MRF150/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode
MRF150
Designed primarily for linear large–signal output stages up to 150 MHz
frequency range.
• Specified 50 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)
150 W, to 150 MHz
N–CHANNEL MOS
LINEAR RF POWER
FET
• Superior High Order IMD
• IMD(d3) (150 W PEP) — – 32 dB (Typ)
• IMD(d11) (150 W PEP) — – 60 dB (Typ)
• 100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
D
G
CASE 211–11, STYLE 2
S
MAXIMUM RATINGS
Symbol
Value
Unit
Drain–Source Voltage
Rating
VDSS
125
Vdc
Drain–Gate Voltage
VDGO
125
Vdc
VGS
± 40
Vdc
Drain Current — Continuous
ID
16
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
300
1.71
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Max
Unit
RθJC
0.6
°C/W
Gate–Source Voltage
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 9
1
