Order this document
by MRF175GU/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field-Effect Transistors
MRF175GU
MRF175GV
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using push pull
circuits at frequencies to 500 MHz. The high power, high gain and broadband
performance of these devices makes possible solid state transmitters for FM
broadcast or TV channel frequency bands.
• Guaranteed Performance
MRF175GV @ 28 V, 225 MHz (“V” Suffix)
Output Power — 200 Watts
Power Gain — 14 dB Typ
Efficiency — 65% Typ
MRF175GU @ 28 V, 400 MHz (“U” Suffix)
Output Power — 150 Watts
Power Gain — 12 dB Typ
Efficiency — 55% Typ
200/150 WATTS, 28 V, 500 MHz
N–CHANNEL MOS
BROADBAND
RF POWER FETs
D
• 100% Ruggedness Tested At Rated Output Power
• Low Thermal Resistance
• Low Crss — 20 pF Typ @ VDS = 28 V
G
S
(FLANGE)
G
CASE 375–04, STYLE 2
D
MAXIMUM RATINGS
Symbol
Value
Unit
Drain–Source Voltage
Rating
VDSS
65
Vdc
Drain–Gate Voltage
(RGS = 1.0 MΩ)
VDGR
65
Vdc
VGS
±40
Vdc
Gate–Source Voltage
Drain Current — Continuous
ID
26
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
400
2.27
Watts
W/°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Max
Unit
RθJC
0.44
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
IDSS
—
—
2.5
mAdc
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
—
—
1.0
µAdc
Characteristic
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
(continued)
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
1