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1SS387
1SS387 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Applications Unit: mm Compact 2-pin package – ideal for high-density mounting Low forward voltage : VF (3) = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 200 mA Maximum (peak) reverse voltage Average forward current IO 100 mA IFSM 1 A Power dissipation P 150 * mW Junction temperature Tj 125 °C Storage temperature Tstg −55∼125 °C Surge current (10ms) JEDEC ― JEITA ― 1-1G1A TOSHIBA Weight: 1.4mg (typ) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass epoxy circuit board of 20 × 20mm, pad dimension of 4 × 4mm. Electrical Characteristics (Ta = 25°C) Symbol Test Circuit VF (1) Characteristic ― VF (2) Min Typ. Max IF = 1mA ― 0.62 ― ― IF = 10mA ― 0.75 ― VF (3) ― IF = 100mA ― 0.98 1.20 IR (1) ― VR = 30V ― ― 0.1 IR (2) ― VR = 80V ― ― 0.5 Total capacitance CT ― VR = 0, f = 1MHz ― 0.5 3.0 pF Reverse recovery time trr ― IF = 10mA, Fig.1 ― 1.6 4.0 ns Forward voltage Reverse current Test Condition 1 Unit V μA 2007-11-01
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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