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1SS384
1SS384 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Maximum (peak) reverse Voltage Average forward current IO 100 * mA IFSM 1* A Power dissipation P 100 * mW Junction temperature Tj 125 °C Storage temperature range Tstg −55∼125 °C Operating temperature range Topr −40∼100 °C Surge current (10ms) JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in TOSHIBA 1-2U1A temperature, etc.) may cause this product to decrease in the Weight: 0.006g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating × 1.5 Electrical Characteristics (Ta = 25°C) Symbol Test Circuit VF (1) Characteristic ― VF (2) Min Typ. Max Unit IF = 1mA ― 0.18 ― V ― IF = 5mA ― 0.23 0.30 V VF (3) ― IF = 100mA ― 0.35 0.50 V Reverse current IR ― VR = 10V ― ― 20 μA Total capacitance CT ― VR = 0, f = 1MHz ― 20 40 pF Forward voltage Test Condition Pin Assignment (Top View) Marking 1 2007-11-01
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