1SS226
Switching Diodes Silicon Epitaxial Planar
1SS226
1. Applications
•
Ultra-High-Speed Switching
2. Packaging and Internal Circuit
1: Anode 1
2: Cathode 2
3: Cathode1 / Anode 2
S-Mini
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Peak reverse voltage
Symbol
Note
Unit
85
VRM
Rating
V
Reverse voltage
VR
Peak forward current
IFM
(Note 1)
300
Average rectified current
IO
(Note 1)
100
Power dissipation
PD
(Note 2)
150
IFSM
(Note 1), (Note 3)
Non-repetitive peak forward surge current
80
mA
mW
2
A
Junction temperature
Tj
125
Storage temperature
Tstg
-55 to 125
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Unit rating. Total rating = Unit rating × 70%
Note 2: Mounted on a glass epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 3: Measured with a 10 ms pulse.
Start of commercial production
1
1982-09
2015-01-08
Rev.2.0