MITSUBISHI SEMICONDUCTOR
M54564P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54564P and M54564FP are eight-circuit output-sourcing
Darlington transistor arrays. The circuits are made of PNP
and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
PIN CONFIGURATION
INPUT
18 →O1
IN2→ 2
17 →O2
IN3→ 3
16 →O3
IN4→ 4
15 →O4
IN5→ 5
14 →O5
IN6→ 6
13 →O6
IN7→ 7
12 →O7
IN8→ 8
11 →O8
VS
FEATURES
High breakdown voltage (BV CEO ≥ 50V)
High-current driving (Io(max) = –500mA)
With output pulldown resistance (Driving available with
fluorescent display tube)
Driving available with PMOS IC output or with TTL output
Wide operating temperature range (Ta = –20 to +75°C)
Output current-sourcing type
IN1→ 1
10
9
OUTPUT
GND
Package type 18P4G(P)
NC
INPUT
1
20
NC
FUNCTION
The M54564P and M54564FP each have eight circuits,
which are made of input inverters and current-sourcing outputs. The outputs are made of PNP transistors and NPN
Darlington transistors. The PNP transistor base current is
constant. Resistance of 50kΩ is connected between each
output pin and GND, making these ICs suitable for fluorescent display tubes. VS and GND are used commonly among
the eight circuits.
Output current is 500mA maximum. Supply voltage VS is 50V
maximum.
The M54564FP is enclosed in a molded small flat package,
enabling space-saving design.
19 →O1
IN2→ 3
18 →O2
IN3→ 4
17 →O3
IN4→ 5
16 →O4
IN5→ 6
15 →O5
IN6→ 7
14 →O6
IN7→ 8
13 →O7
IN8→ 9
12 →O8
VS
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors
IN1→ 2
11
10
OUTPUT
GND
Package type 20P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
VS
20K
INPUT
8K
7.2K
1.5K
3K
20K
OUTPUT
50K
GND
The eight circuits share the VS and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
Aug. 1999
