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2SC6124TE12LF
2SC6124 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Power Switching Applications Unit: mm Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 400 ns (typ.) Complementary to 2SA2206 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VCBO 160 V VCEX 160 V VCEO 80 V VEBO 7 V DC IC 2 A JEDEC Pulse ICP 4 A JEITA SC-62 IB 0.5 A TOSHIBA 2-5K1A t = 10 s PC 2.5 (Note 1) 1.0 W Weight: 0.05 g (typ.) DC Tj 150 °C Tstg −55 to 150 °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range 1 : BASE 2 : COLLECTOR (HEAT SINK) 3 : EMITTER ⎯ 2 Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm ) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-10-19
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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