MITSUBISHI SEMICONDUCTOR
M54523P/FP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M54523P and M54523FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
PIN CONFIGURATION
IN1→ 1
IN2→ 2
14 →O3
IN4→ 4
13 →O4
IN5→ 5
INPUT
15 →O2
IN3→ 3
FEATURES
q High breakdown voltage (BVCEO ≥ 50V)
q High-current driving (IC(max) = 500mA)
q With clamping diodes
q Driving available with PMOS IC ouput
16 →O1
12 →O5
IN6→ 6
11 →O6
IN7→ 7
10 →O7
GND
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and interfaces between standard
MOS-bipolar logic IC
FUNCTION
The M54523P and M54523FP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 2.7kΩ between input transistor bases and input
pins. A spike-killer clamping diode is provided between each
output pin (collector) and COM pin. The output transistor
emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply
voltage is 50V maximum.The M54523FP is enclosed in a
molded small flat package, enabling space-saving design.
OUTPUT
9
8
COM COMMON
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
COM
OUTPUT
INPUT
2.7k
5k
3k
GND
The seven circuits share the COM and GND
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
(Unless otherwise noted, Ta = –20 ~ +75°C)
Parameter
Collector-emitter voltage
Collector current
Conditions
Output, H
Current per circuit output, L
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Unit : Ω
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +50
500
–0.5 ~ +30
500
50
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
Unit
V
mA
V
mA
V
W
°C
°C
Feb.2003
