JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
2SD1899
TRANSISTOR (NPN)
TO-252-2L
FEATURES
High hFE hFE=100 to 400
Low VCE(sat) VCE(sat)=0.25V
1.BASE
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
2.COLLECTOR
Symbol
Parameter
Value
3.EMITTER
Units
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current -Continuous
3
A
PC
Collector Power Dissipation
1
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
1
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Symbol
Parameter
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC =1mA,IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
7
V
Collector cut-off current
ICBO
VCB=60V,IE=0
10
μA
Emitter cut-off current
IEBO
VEB=7V,IC=0
10
μA
hFE(1)
VCE=2V,IC=200mA
60
hFE(2)
VCE=2V,IC=600mA
100
hFE(3)
VCE=2V,IC=2A
50
DC current gain
400
Collector-emitter saturation voltage
VCE(sat)
IC=1.5A,IB=150mA
0.25
V
Base-emitter saturation voltage
VBE(sat)
IC=1.5A,IB=150mA
1.2
V
fT
Transition frequency
Cob
Collector output capacitance
Turn on Time
Switching Time
tstg
Rank
Range
MHz
VCB=10V,IE=0,f=1MHz
30
pF
0.5
VCC=10V,IC=1A,IB1=-IB2=-0.1A
2.0
0.5
tf
Fall Time
CLASSIFICATION OF
120
ton
Storage Time
VCE=5V,IC=1.5A
hFE(2)
M
L
K
100-200
160-320
200-400
μs