Power Transistor (50V, 3A)
2SD1864
Dimensions (Unit : mm)
Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1243.
2SD1864
2.5±0.2
0.65Max.
0.5±0.1
(1)
(2)
4.4±0.2
14.5±0.5
Structure
Epitaxial planar type
NPN silicon transistor
1.0
0.9
6.8±0.2
(3)
2.54 2.54
0.45±0.1
1.05
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
3
A (DC)
4.5
A (Pulse)
1
W
Collector current
IC
Collector power dissipation
PC
Junction temperature
Tj
150
Tstg
−55 to +150
∗2
°C
Storage temperature
∗1
°C
∗1 Single pulse, PW=100ms
∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Parameter
BVCBO
60
−
−
V
IC=50μA
Collector-emitter breakdown voltage
BVCEO
50
−
−
V
IC=1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V
IE=50μA
Collector cutoff current
ICBO
−
−
1
μA
VCB=40V
Emitter cutoff current
IEBO
−
−
1
μA
VEB=4V
VCE (sat)
−
0.5
1
V
IC/IB=2A/0.2A
∗
hFE
120
−
390
−
VCE=3V, IC=0.5A
∗
Transition frequency
fT
−
90
−
MHz
VCE=5V, IE=−500mA, f=30MHz
∗
Output capacitance
Cob
−
40
−
pF
Collector-emitter saturation voltage
DC current transfer ratio
Conditions
VCB=10V, IE=0A, f=1MHz
∗ Measured using pulse current.
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2010.04 - Rev.B