HL6362MG/63MG
ODE2026-00 (M)
Rev.0
Aug. 01, 2008
Low Operating Current Visible Laser Diode
Description
The HL6362MG/63MG are 0.63 μm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are
suitable as light sources for laser display, laser scanners and optical equipment for measurement.
Features
•
•
•
•
•
•
•
Package Type
• HL6362MG/63MG: MG
Visible light output: 640 nm Typ
Single longitudinal mode
Optical output power: 40 mW CW
Low operating current: 90 mA Typ
Low operating voltage: 2.6 V Max
Operating temperature: +50°C
TE mode oscillation
Internal Circuit
• HL6362MG
1
Internal Circuit
• HL6363MG
1
3
PD
LD
3
PD
2
LD
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
PO
VR(LD)
VR(PD)
Topr
Tstg
Ratings
45
2
30
–10 to +50
–40 to +85
Unit
mW
V
V
°C
°C
Optical and Electrical Characteristics
(TC = 25°C)
Item
Threshold current
Operating current
Symbol
Ith
IOP
Min
—
—
Typ
45
90
Max
60
110
Unit
mA
mA
Operating voltage
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Lasing wavelength
Monitor current
VOP
—
2.4
2.6
V
θ//
7
10
13
°
PO = 40 mW
PO = 40 mW
θ⊥
16
21
24
°
PO = 40 mW
λp
IS
—
0.15
640
0.30
643
0.60
nm
mA
Rev.0 Aug. 01, 2008 page 1 of 4
Test Condition
—
PO = 40 mW
PO = 40 mW
PO = 40 mW ,VR(PD) = 5 V