2SD1271A
7A , 150V
NPN Plastic-Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
ITO-220J
FEATURES
Power switching applications
Low Collector to Emitter Saturation Voltage VCE(sat)
Satisfactory Linearity of Forward Current Transfer Ratio hFE
Large Collector Current
B
N
M
A
H
J
C
L
D
E
K
L
CLASSIFICATION OF hFE
Product-Rank
2SD1271A-R
2SD1271A-Q
2SD1271A-P
Range
60~120
90~180
130~260
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
14.80
15.60
9.50
10.50
13.00 REF.
4.30
4.70
2.50
3.20
2.40
2.90
0.30
0.75
G
F
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
3.00
4.00
0.90
1.50
0.50
0.90
2.34
2.74
2.50
2.90
φ 3.5 REF.
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
150
V
Collector to Emitter Voltage
VCEO
100
V
Emitter to Base Voltage
VEBO
7
V
Collector Current - Continuous
IC
7
A
Collector Power Dissipation
PC
2
W
RθJA
62.5
° /W
C
TJ, TSTG
150, -55~150
°
C
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Collector to Base Breakdown Voltage
V(BR)CBO
150
-
-
V
IC=0.1mA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
100
-
-
V
IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
7
-
-
V
IE=0.1mA, IC=0
Collector Cut – Off Current
ICBO
-
-
10
µA
VCB=100V, IE=0
Emitter Cut – Off Current
IEBO
-
-
50
µA
VEB=5V, IC=0
DC Current Gain
hFE
45
-
-
60
-
260
VCE=2V, IC=0.1A
VCE=2V, IC=3A
Collector-emitter saturation voltage
VCE(sat)
-
-
0.5
V
IC=5A, IB=250mA
Base to Emitter Saturation Voltage
VBE(sat)
-
-
1.5
V
IC=5A, IB=250mA
fT
-
30
-
MHz
Transition Frequency
http://www.SeCoSGmbH.com/
08-Nov-2012 Rev. A
VCE=10V, IC=500mA, f =10MHz
Any changes of specification will not be informed individually.
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