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部品型式

SSM3K16FVTPL3,Z

製品説明
仕様・特性

SSM3K16FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FS High Speed Switching Applications Analog Switch Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±10 V DC ID 100 Pulse IDP 200 Drain power dissipation (Ta = 25°C) PD 100 mW Channel temperature Tch 150 °C JEDEC ― Storage temperature range Tstg −55~150 °C JEITA ― Drain current Note: mA TOSHIBA 2-2H1B Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 2.4 mg (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Internal connections 3 3 DS 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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データシート
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型式 数量 D/C・lead 備考 選択
SSM3K16FVTPL3,Z 7768個 0819 ROHS
SSM3K16FVTPL3,Z 30個 08+RoHS  
SSM3K16FVTPL3,Z 10800個    
SSM3K16FVTPL3,Z 7168個    
SSM3K16FVTPL3,Z 5940個    

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