POWEREX
MITSUBISHI SEMICONDUCTOR
M54585P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
High breakdown voltage (BV CEO ≥ 50V)
High-current driving (Ic(max) = 500mA)
With clamping diodes
Driving available with TTL output or with PMOS IC output
Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION
INPUT
IN1→ 1
18 →O1
IN2→ 2
17 →O2
IN3→ 3
16 →O3
IN4→ 4
15 →O4
IN5→ 5
14 →O5
IN6→ 6
13 →O6
IN7→ 7
12 →O7
IN8→ 8
11 →O8
GND
10 →COM COMMON
FUNCTION
The M54585P and M54585FP each have eight circuits,
which are NPN Darlington transistors. Input transistors have
resistance of 2.7kΩ between the base and input pin. A spikekiller clamping diode is provided between each output pin
and GND. Output transistor emitters are all connected to the
GND pin.
Collector current is 500mA maximum. The maximum collector-emitter voltage is 50V.
The M54585FP is enclosed in a molded small flat package,
enabling space-saving design.
OUTPUT
9
Package type 18P4G(P)
NC
APPLICATION
Drives of relays and printers, digit drives of indication elements such as LEDs and lamps, and MOS-bipolar logic IC
interfaces
INPUT
1
20
NC
IN1→ 2
19 →O1
IN2→ 3
18 →O2
IN3→ 4
17 →O3
IN4→ 5
16 →O4
IN5→ 6
15 →O5
IN6→ 7
14 →O6
IN7→ 8
13 →O7
IN8→ 9
12 →O8
GND
11 →COM COMMON
OUTPUT
10
Package type 20P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
COM
OUTPUT
INPUT
2.7K
7.2K
3K
GND
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
Aug. 1999
