HL6714G
ODE2043-00 (M)
Rev.0
Aug. 01, 2008
AlGaInP Laser Diode
Description
The HL6714G is a 0.67 μm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is
suitable as a light source for laser beam printers, levelers and various other types of optical equipment. Hermetic
sealing of the package assures high reliability.
Features
•
•
•
•
Package Type
• HL6714G: G2
Visible light output at wavelengths up to 680 nm
Single longitudinal mode
High output power: 10 mW (CW)
Built-in monitor photodiode
Internal Circuit
1
3
PD
LD
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Symbol
Ratings
10
12 *
2
30
–10 to +50
–40 to +85
PO
PO(pulse)
VR(LD)
VR(PD)
Topr
Tstg
Unit
mW
mW
V
V
°C
°C
Note: Pulse condition : Pulse width ≤ 1 μs , duty ≤ 50%
Optical and Electrical Characteristics
(TC = 25°C)
Item
Threshold current
LD operating voltage
Slope efficiency
Symbol
Ith
VOP
ηs
Min
20
—
0.3
Typ
35
—
0.5
Max
60
2.7
0.8
Unit
mA
V
mW/mA
θ//
5
8
11
°
Test Conditions
—
PO = 10 mW
6 (mW) / (I(8mW) – I(2mW))
PO = 10 mW, FWHM
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Astigmatism
θ⊥
18
22
30
°
PO = 10 mW, FWHM
AS
—
10
—
μm
PO = 10 mW, NA = 0.55
Lasing wavelength
Monitor current
λp
IS
660
0.3
670
0.8
680
1.5
nm
mA
PO = 10 mW
PO = 10 mW, VR(PD) = 5 V
Rev.0 Aug. 01, 2008 page 1 of 4